(Reuters) - Japan’s Elpida Memory Inc and Sharp Corp will co-develop a next-generation memory chip for commercialization in 2013, reported The Nikkei business daily. The ReRAM or resistive random access memory chip consumes less power and is capable of writing data 10,000 times faster than NAND flash memory, which is widely used in mobile devices, the business daily said.
According to the paper, a ReRAM chip incorporated device will be able to download a high-definition movie in several seconds and cut power consumption to virtually zero when on standby mode.
The National Institute of Advanced Industrial Science and Technology, the University of Tokyo and other chip equipment makers will join Elpida and Sharp Corp, the world’s No. 3 maker of solar cells, in this effort, the business daily added.
Mass production, which will probably be handled by Elpida, the world’s No. 3 maker of DRAM chips (dynamic random access memory chips), is expected to begin as early as 2013, the paper said.
Competitor Toshiba Corp is working on a new type of flash memory with a layered structure, while Samsung Electronics Co is developing ReRAM, PRAM or phase-change random access memory and magnetoresistive random access memory or MRAM chips, the Nikkei said. (Reporting by Rachel Chitra in Bangalore; Editing by Roshni Menon)