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BRIEF-Gigadevice Semiconductor signs DRAM project worth 18 bln yuan
October 27, 2017 / 12:33 PM / in a month

BRIEF-Gigadevice Semiconductor signs DRAM project worth 18 bln yuan

Oct 27 (Reuters) - Gigadevice Semiconductor Beijing Inc

* Says it signs agreement for DRAM project with total investment at about 18 billion yuan ($2.71 billion)

Source text in Chinese: bit.ly/2gMOHhb

Further company coverage: ($1 = 6.6530 Chinese yuan renminbi) (Reporting by Hong Kong newsroom)

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